1)AlN ceramic plates 2)High thermal conductivity, good insulation, High insulation resistivity 3)We are the biggest factory
Property Index of Aluminum Nitride substrates
Property content | Property Index |
Thermal conductivity (W/m·k) | ≥170 |
Volume resistivity (Ω·cm) | >1013 |
Dielectric constant [1MHz, 25°C] | 9 |
Dielectric loss [1MHz,25°C] | 3.8*10-4 |
Dielectric strength(KV/mm) | 17 |
Density (g/cm3) | ≥3.30 |
Surface roughness Ra(µm) | 0.3~0.5 |
Thermal expansivity [20°C to 300°C](10-6/°C) | 4.6 |
Flexural strength (MPa) | 320~330 |
Modulus of elasticity (GPa) | 310~320 |
Moh’s hardness | 8 |
Water absorption(%) | 0 |
Camber(~/25(length)) | 0.03~0.05 |
Melting point(°C) | 2500 |
Appearance/color | Dark Gray |
The aluminum nitride ceramic substrate which has high thermal conductivity of more than 170W/m.k,
high density, low dielectric loss, good insulation and some other excellent properties.The ALN
substrate is the best choice for a wide range of industrial insulating heat sink material of high
power machinery and equipments such as highfrequency equipment substrate, high power
transistor module substrate, high density hybrid circuits, microwave power devices, power
semiconductor devices, power electronic devices, optoelectronic components, laser semiconductor,
LED, IC products, and so on.
Surface roughness can be reached within 0.1µm after being polished. Size tolerance can be controlled
at around ±0.1mm by laser machine.
Different dimension and thickness are available via laser cutting or customize.
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