1) aln ceramic heat sink used for semiconductor 2)High thermal conductivity, good insulation 3)We are factory with trading dep
Property Index of Aluminum Nitride substrates
Property content | Property Index |
Thermal conductivity (W/m·k) | ≥170 |
Volume resistivity(Ω·cm) | >1013 |
Dielectric constant [1MHz, 25°C] | 9 |
Dielectric loss [1MHz,25°C] | 3.8*10-4 |
Dielectric strength(KV/mm) | 17 |
Density(g/cm3) | ≥3.30 |
Surface roughness Ra(µm) | 0.3~0.5 |
Thermal expansivity [20°C to 300°C](10-6/°C) | 4.6 |
Flexural strength (MPa) | 320~330 |
Modulus of elasticity (GPa) | 310~320 |
Moh’s hardness | 8 |
Water absorption(%) | 0 |
Camber(~/25(length)) | 0.03~0.05 |
Melting point(°C) | 2500 |
Appearance/color | Dark Gray |
The aln ceramic heat sinkwhich has high thermal conductivity of more than 170W/m.k, high
density, low dielectric loss, good insulation and some other excellent properties. The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipments such as high frequency equipment substrate, high power transistor module substrate,
high density hybrid circuits, microwave power devices, power semiconductor devices, power electronic
devices, optoelectronic components, laser-semi-conductor, LED, IC products, and so on.
Surface roughness can be reached within 0.1µm after being polished. Size tolerance can be controlled
at around ±0.1mm by laser machine.
Different dimension and thickness are available via laser cut or customize.
aln ceramic heat sink used for semiconductor
