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Plasma Enhanced Chemical Vapor Deposition(PECVD-200)
Plasma Enhanced Chemical Vapor Deposition(PECVD-200)

Detailed Product Description


Type

PECVD-200

PECVD-450

PECVD-650

Dimension of the deposition chamber

Φ230×H300 mm

Φ450×H400 mm

Φ650×H600 mm

Dimension of the substrate platform

Φ100×10 mm

Φ120×12 mm

Φ150×15 mm

Rotation rate of the substrate platform

0-20 rpm ( adjustable )

Power supply

RF power supply

Vacuum pumps

Molecular pump + Mechanical pump

Highest attained vacuum

6. 6 ×10-5 Pa

Film types

Dielectric / Semiconductor / Metal film

Gas flow control

3-4 Road gas flow control (optional)

Vacuum chamber

Pre-open vertical structures, Under-position pumping systems

Pumping speed

Pumping time≤30 min, from atmospheric pressure to 10-3Pa

Film uniformity

The fluctuations of the film thickness are less than 5%

Vacuum measurement

Digital composite vacuum gauges, Vacuum measurement ranging from atmospheric pressure to 10-6 Pa

Vacuum control

Available Manual / PLC / PLC+HMI Control (optional)

Protection

Alarm and automatic protection function for water depletion, abnormal flow, over current flowing, over voltage, and electrical shutdown, etc.

Basic parameters

Power≥10 KW; Served area: 4-20 m2; Weight 100-800 kg

Optional devices

Water cooling & recycling machine, Residual gas analyzer

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