Shenzhen Leading Chips Electronic And Technology Co., Ltd. [China]

CMOS FLASH MEMORY

2.7~3.6-volt write (program and erase) operationsFast write operationSector erase time: 0.7s (Typical)Chip erases time: 25 s (Typical)Byte/Word programming time: 5/7 μs (Typical)Read access time: 70 nsTypical program/erase cycles:100KTwenty-year data retentionUltra low power consumptionActive current (Read): 9mA (Typical)Active current (Program/erase): 20mA (Typical)Standby current: 0.2 μA (Typical)

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FLASH MEMORY