5N60,power mosfet: 1,VDSS:600V; 2,RDS(ON) ):2.5 ohm; 3,Id:4.1 A;Package:TO-220; 4,Certification:RoHS Compliant.
5N60,N-Channel Power MOSFET:
1,Part Number:CSP5N60M;2,Drain to Source Voltage(VDSS):600V;N-Channel MOSFET;3,Static Drain-Source On-state Resistance(RDS(ON) ):2.5 ohm;4,Continuous Drain Current(@TC = 25°C)(ID):4.1 A5,Package:TO-220;Tube packing;Green Product and No Pb;6,Certification:RoHS Compliant,ISO9001:2008 Certificate,SGS Report etc..
7,Features:High ruggednessRDS(on) (Max 2.5 Ω )@VGS=10VGate Charge (Typical 19nC)Improved dv/dt Capability100% Avalanche Tested
8,General Description :This N-channel enhancement mode field-effect power transistorusing CSI semiconductor’s advanced planar stripe, DMOS technologyintended for off-line switch mode power supply.Also, especially designed to minimize rds(on) and high ruggedavalanche characteristics. The TO-220 package is well suited foradaptor power unit and power inverter application.
power mosfet 5N60
