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N1.4G/Power Transistor Chips
N1.4G/Power Transistor Chips
Yangzhou Genesis Microelectronics Co., Ltd. [China]

Detailed Product Description


Bbase area size 309μm × 668μm 
Emitter 389μm × 538μm
Chip thickness of 240 ± 10μm
Blade slot width 50μm
Positive metal layer: Al 3.1 ± 0.2μm
Back: Ag 1.4 ± 0.2μm

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