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Silicon bipolar NPN power switching transistor 3DK463(3DK011)
Silicon bipolar NPN power switching transistor 3DK463(3DK011)

1 metal sealing 2 2 gram per piece 3 Short opened or cut-off time 4 great dissipation power

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       2 gram per piece       Short opened or cut-off time       great dissipation power        light weight, small volumn

3 standard: national military  standard of GB33A-97 Q/FR20101-2001

4 application:  widely used in switch circuit,  amplifier circuit, etc. 

Para name

symbols

data

unit

collector-base voltage (IE=0)

VCBO

80

V

collector-emitter voltage (IB=0)

VCEO

80

V

Emitter-base voltage (IC=0)

VEBO

          7

V

collector DC current

IC

10

A

Total dissipation power

TC≤25°C

TC>25°C Lower voltage

 

Ptot

 

 

50

0.4

 

W

 

W/°C

Working temperature

Tj

150

°C

Store temperature

Tstg

-50~175

°C

outline dimension

     

Silicon bipolar NPN power switching transistor 3DK463(3DK011)

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