S9015 General purpose application. Switching application. Excellent hFE linearity. Complementary pair with S9014
S9015 General Transistor
FEATURES
Excellent HFE Linearity HFE hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
Low Noise NF=1dB(Typ.),10db(Max.).
Complementary to GM9014(S9014)
MAXIMUM RATINGS (Ta=25)
CHARACTERISTIC | Symbol | Rating | Unit |
Collector-Base Voltage | VCBO | -50 | Vdc |
Collector-Emitter Voltage | VCEO | -45 | Vdc |
Emitter-Base Voltage | VEBO | -5.0 | Vdc |
Collector Current-Continuous | Ic | -150 | mAdc |
Base Current | IB | -30 | mAdc |
Collector Power Dissipation | PC | 225 | mW |
Junction Temperature | Tj | 150 | |
Storage Temperature Range | Tstg | -55~150 |
DEVICE MARKING
GM9015(S9015)=M6 |
ELECTRICAL CHARACTERISTICS
TA=25 unless otherwise noted
Characteristic | Symbol | Test Condition | Min | Typ | Max | Unit |
Collector Cutoff Current | ICBO | VCB=-50V,IE=0 | — | — | -0.1 | μA |
Emitter Cutoff Current | IEBO | VEB=-5V,IC=0 | — | — | -0.1 | μA |
Collector-Base Breakdown Voltage | V(BR)CBO | IC=-100μA | -50 | — | — | V |
Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-1.0mA | -45 | — | — | V |
Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-100μA | -5 | — | — | V |
DC Current Gain | hFE | VCE=-6V,IC=-2mA | 200 | — | 700 | — |
Collector-Emitter Saturation Voltage | VCE(sat) | IC=-100mA, IB=-5mA | — | — | -0.6 | V |
Base-Emitter Voltage | VBE | VCE=-5.0V,IC=-10mA | — | — | -0.82 | V |
Transition Frequency | fT | VCE=-5.0V,IC=-10mA | 100 | 180 | — | MHz |
Collector Output Capacitance | Cob | VCB=-10V,IE=0, f=1MHz | — | 4.0 | 7.0 | pF |
S9015 General Transistor
