DRT series IGBT drive series transformer is our new product designed for drive IGBT and MOSFET, using New material as core mater
Parameter Definitions, diagrams of Layout/Installation/Coil, Typical Specifications:
1 Parameter Definitions:
u-Tum ratio=1:2:3
Vp-dielectric strength between coil windings with 60s test duration.
∫udt-Math product of volt-microsecond≈V1·tn(the value can keep unchanged in some frequency range).
V1-Input signal voltage (primary pulse voltage).
tn-Rated pulse width of the drive transformer, under related V1 and Fp.
V2-Output signal voltage (secondary pulse voltage).
RL-IGBT module or MOSFET equivalent resistance of control section.
Lp-Inductance of primary, f=1000Hz, V=0.3V.
Ls-Leakage inductance(measured when secondary shorted) f=1000Hz, V=1V.
Ck-Coupling capacity, f=1000Hz, V=1V.
Model | Ratio u | Vp (kV) | Primary Induction LP | Leakage Induction LS | Coupling Capacity CK | ∫udt (μVS) | V1 (V) | tn (μS) | V2 (V) | RL (Ω) | Frequency |
DRT801/211B | 2:1:1 | 3.1 | 8mH | 10μH | 22pF | ≥280 | 20 | 14 | 9 | 100 | 100Hz~50 kHz |
IGBT driver transformers
