1.Very low on-state voltage drop; 2.Ultra-low thermal resistance; 3.High current density.
Runau Electronics(Yangzhou)Manufacturing Co.,Ltd has been dedicated power semiconductor R&D,manufacture and sales for almost 30 years.The company main products are all kinds of thyristor,rectifier diode,power unit,modules etc.Products of the company is widely applied in HVDC,traction and transmission,SVC,high current power supply,soft starter,excitation,inductive heating,etc.Products have been exported to USA,India,Germany,Southeast Asia,and other international markets.
ZP12000A WELDING DIODES
RunAu Electronics (YangZhou) Manufacturing Co;Ltd 200 - 400 VRRM; 12000 A avg
Features:
. All Diffused Structure
.High current density
. Very low on-state voltage drop
. metal case with ceramic insulator
. Ultra-low thermal resistance
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
DeviceType | VRRM(1) | VRSM(2) |
ZP12000/02 | 200V | 300V |
ZP12000/04 | 400V | 450V |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage | IRRM | 15 mA 50 mA (3) |
Conducting - on state
Parameter | Symbol | Max. | Units | Conditions |
Average value of on-state current | IF(AV) | 12000 | A | SINE,180o Conduction angle,Tc=85oC |
RMS value of on-state current | IF(RMS) | 18800 | A | |
Peak one cycle surge (non repetitive) current | IFSM | 85000 | A | 10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC |
I2t | I2t | 36100000 | A2s | 10.0 msec, sine, Tj = 170 oC |
Peak on-state voltage | VFM | 1.02 1.00 | V | IFM =8000 A; 25 oC IFM =5000 A; 25 oC |
Threshold votage | VTO | 0.74 | V | Tj = 170 oC |
Slope resistance | rT | 0.019 | mΩ | Tj = 170 oC |
DIODE --For welding machine
