Detailed Product Description

Features:
1) All-diffused structure
2) Amplifying gate configuration
3) VTM<1.65V at 125°C, 2,000A
4) High DV/DT capability; blocking capability up to 3000V
5) Pressure assembled device
6) For phase control applications

Specifications at 125°C:
1) VTM≤1.65V @ITM=2000A
2) DI/DT = 200A/us
3) VRRM/VDRM: 2500-3000V