Material

Mono-crystalline Sapphire (Al2O3)

Growth Method

Kyropulos or other growth methods on agreement

Purity

>= 99.996% (Ti content <=4 ppm)

2 inch diameter

3 and 4 inch

Orientation

C-plane(0001) ±1°

C-plane(0001) ±0.5°

Primary Flat Orientation

A-plane ±1°

A-plane ±1°

Primary Flat Length (mm)

16 ±1

22±1

Secondary Flat

On request

On request

Diameter (mm)

50.8 ±0.05

Dia76.2 or 101.6±0.05

Thickness (μm)

>=100

>=100

Surface Roughness Ra (μm)

W20 carborundum grind

W20 carborundum grind

Chips (flaws)

< 0.2 and 3places

< 0.2 and 4 places

Crystal Defects (inclusions, twins, cracks, bubbles, scattering

centers)

None

None

Treatments

High temperature annealed

 no crystal coloration