Weld diode chip independent development(7100A-200V)
1:All the diffusion structure 2:High current density 3:low loss 4:Low thermal resistance
1: Designed for high frequency welding equipment and large current rectifier design
2: Through verification of high reliability welding components, an extremely low voltage and the state very low thermal resistance .
| parameter | maximum | unit |
| IF(AV) | 7100 | A |
| IF(RSM) | 11200 | A |
| IFsm | 55000 | A |
| I2t | 15100000 | A2S |
| VFM | 1.05 | V |
| VTO | 0.74 | V |
| rT | 0.026 | mΩ |
| IRM(REC) | A | |
| Qrr | uC | |
| tRR | us |
Weld diode chip independent development(7100A-200V)
