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Features: . Ultra-low thermal resistance . High current density . Very low on-state voltage drop

 ZP7100-WELDING DIODES

RunAu Electronics (YangZhou) Manufacturing Co;Ltd        200 - 400 VRRM; 7100 A avg

Features:

. All Diffused Structure

   .High current density            

   . Very low on-state voltage drop 

   . Ultra-low thermal resistance

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Device Type

VRRM (1)

VRSM (2)

ZP7100/02

200V

300V

ZP7100/04

400V

450V

         VRRM = Repetitive peak reverse voltage

         VRSM = Non repetitive peak reverse voltage (2)

    

Repetitive peak reverse leakage

IRRM

15 mA

50 mA (3)

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1)Half sine, f=50Hz, Tj = -40 to +170oC.

(2)Half sine, 10 msec,Tj = -40 to +170oC.

(3) Maximum junction temperature:Tj = 170 oC.

(4) Parameters are defined below :

Conducting - on state

  Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IF(AV)

7100

A

sine,180oConduction angle,Tc =85oC

RMS value of on-state current

IF(RMS)

11200

A

Peak one cycle surge

(non repetitive) current

IFSM

55000

A

10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC

I2t

I2t

15100000

A2s

10.0 msec, sine, Tj = 170 oC

Peak on-state voltage

VFM

1.05

V

IFM =5000 A; 25 oC

Threshold votage

VTO

0.74

V

Tj = 170 oC

Slope resistance

rT

0.026

Tj = 170 oC

Reverse Recovery Current (4)

IRM(REC)

A

IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax

Reverse Recovery Charge (4)

Qrr

mC

IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax

Reverse Recovery Time (4)

tRR

ms

                                                   

                                                                                          

THERMAL AND MECHANICAL CHARACTERISTICS                          ZP7100 –Welding diodes                                                                                   

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating junction temperature range

Tj

-40

+170

oC

Storage temperature

Tstg

-40

+170

oC

Thermal resistance - junction to case

RQ (j-c)

0.01  

oC/W

Double sided cooled

Thermal resistance - case to sink

RQ (j-c)

0.02

oC/W

Single sided cooled

Creepage distance on the surface

DS

4

mm

Air breakdown distance

Da

4

mm

Mounting force

F

5000

22.2

6000

26.7

lb.

kN

Weight

W

5

140

oz.

g

DIODE

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